@misc{oai:repo.qst.go.jp:00077274,
 author = {Takeuchi, K. and Sakamoto, T. and Tada, M. and Kuboyama, S. and Takeyama, Akinori and Ohshima, Takeshi and H.Shindo and Takeyama, Akinori and Ohshima, Takeshi},
 month = {Oct},
 note = {Single event effects (SEEs) of atom switches (ASs) embedded on 40-nm complementary metal oxide semiconductor (CMOS) are investigated with both heavy ion and pulsed laser irradiation. In the evaluation of atom switch-based field programmable Gate Array (AS-FPGA), ASs show immunity against the irradiation and there is no change of the state of ASs both in a cross-bar switch and memory in look up tables (LUTs). It is supposed that ASs do not make any single event transients (SETs) noise when the ions hit. On the other hand, the CMOS layer shows SETs and new approaches to solve the SET in CMOS are proposed, especially for AS-FPGA application., TIA10周年記念シンポジウム －拡大と深化で未来を拓くTIA－},
 title = {Single Event Effects Induced on Atom Switch based Field Programmable Gate Array},
 year = {2019}
}