{"created":"2023-05-15T14:56:41.604063+00:00","id":76938,"links":{},"metadata":{"_buckets":{"deposit":"cac78afa-fc03-4a8c-93b2-aa130e8ca221"},"_deposit":{"created_by":1,"id":"76938","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"76938"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00076938","sets":["10:28"]},"author_link":["786865","786867","786866","786861","786864","786863","786868","786862"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-09-19","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"  原子力発電所の安全な廃炉プロセス実行のため、耐放射線性の可視光応答型カメラの実現が求められている。現在、一般的に用いられている4H型炭化ケイ素(4H-SiC)は耐放射線性に優れるが、可視光を吸収できない。そこで、駆動部である金属-酸化膜-半導体電界効果トランジスタ(MOSFET)をSiCで、受光部は、放射線耐性はやや劣るが可視光に応答するシリコン(Si)フォトダイオードで作製し、これらを集積化するプロセスを設計した。さらにこのプロセスで64画素(8x8)の可視光応型イメージセンサを試作し、室温でガンマ線照射を行った。2.2 MGy照射後もイメージセンサの動作特性は未照射とほぼ変わらず、今回設計したプロセスにより、数MGｙ耐性を有する可視光応答型イメージセンサの製作が可能であることを実証した。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第80回応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"目黒, 達也"}],"nameIdentifiers":[{"nameIdentifier":"786861","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"長谷部, 史明"}],"nameIdentifiers":[{"nameIdentifier":"786862","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"786863","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"786864","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 保宣"}],"nameIdentifiers":[{"nameIdentifier":"786865","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"黒木, 伸一郎"}],"nameIdentifiers":[{"nameIdentifier":"786866","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"786867","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"786868","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"耐放射線イメージセンサに向けたSOI-Si/4H-SiC 画素集積化プロセス","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"耐放射線イメージセンサに向けたSOI-Si/4H-SiC 画素集積化プロセス"},{"subitem_title":"SOI-Si/4H-SiC pixel array fabrication process for radiation hardened image sensors","subitem_title_language":"en"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-09-26"},"publish_date":"2019-09-26","publish_status":"0","recid":"76938","relation_version_is_last":true,"title":["耐放射線イメージセンサに向けたSOI-Si/4H-SiC 画素集積化プロセス"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T00:07:43.109806+00:00"}