{"created":"2023-05-15T14:56:41.559877+00:00","id":76937,"links":{},"metadata":{"_buckets":{"deposit":"a5d149bc-1023-4000-9370-8571e4bf90f7"},"_deposit":{"created_by":1,"id":"76937","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"76937"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00076937","sets":["10:28"]},"author_link":["786874","786870","786873","786876","786872","786869","786875","786871"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-09-19","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"  福島第一原発でのデブリ取り出しに向け、耐放射線性に優れるイメージセンサの実現が求められている。炭化ケイ素（SiC）はバンドギャップがシリコンの3倍程度と大きく、耐熱性、耐放射線性に優れているため、高温、高放射線環境下で動作可能な電子デバイスの作製に適した材料できる。本研究では4H型SiC (4H-SiC)を用いて1画素のイメージセンサを試作し、そのガンマ線耐性を評価した。イメージセンサの電気特性測定は、駆動電圧(VDD=-10 V)、イメージセンサを構成するフォトダイオードに周波数100 Hzの矩形波パルス電圧（RS=-10 V）を印加しつつ行った。また波長254nmの紫外光を照射し、光に対する応答特性を調べた。\n  その結果、遮光状態では8.4mV、254 nmの紫外光照射時は0.45 Vの出力電圧が得られた。また3MGyのガンマ線照射後も特性はほぼ変わらず、試作したイメージセンサがMGyの耐性を持つことを明らかにした。\n","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第80回応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"西垣内, 健汰"}],"nameIdentifiers":[{"nameIdentifier":"786869","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"目黒, 達也"}],"nameIdentifiers":[{"nameIdentifier":"786870","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"786871","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"786872","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 保宣"}],"nameIdentifiers":[{"nameIdentifier":"786873","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"黒木, 伸一郎"}],"nameIdentifiers":[{"nameIdentifier":"786874","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"786875","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"786876","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"耐放射線UVイメージセンサのためのフル4H-SiC画素デバイス","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"耐放射線UVイメージセンサのためのフル4H-SiC画素デバイス"},{"subitem_title":"Full 4H-SiC Pixel Device s for Radiation-Hardened UV Image Sensors","subitem_title_language":"en"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-09-26"},"publish_date":"2019-09-26","publish_status":"0","recid":"76937","relation_version_is_last":true,"title":["耐放射線UVイメージセンサのためのフル4H-SiC画素デバイス"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T00:07:36.913929+00:00"}