{"created":"2023-05-15T14:56:41.515364+00:00","id":76936,"links":{},"metadata":{"_buckets":{"deposit":"a5e0f120-2a89-4488-89da-ed3068e4c776"},"_deposit":{"created_by":1,"id":"76936","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"76936"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00076936","sets":["10:28"]},"author_link":["786882","786877","786880","786884","786881","786883","786878","786879"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-09-19","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"  炭化ケイ素（SiC）は高電界、高温動作性に優れ、パワー半導体素子への応用が進められている。さらなる高効率・高信頼化のためには、キャリア再結合中心として働き素子効率、信頼性を低下させる結晶欠陥準位密度の低減が望まれる。本研究では金属-酸化物-半導体電界効果トランジスタ(MOSFET)構造の試料に、SiCのバンドギャップよりも小さいエネルギーを持つ禁制帯内励起（Below-Gap Excitation, BGE）光（波長1,064nm（エネルギー1.17eV））を断続照射し、フォトルミネッセンス（PL）強度の変動から欠陥準位の検出を試みた。その結果、BGE光の照射によりPL強度は徐々に低下し、MOSFET構造中の欠陥準位の検出が可能であることが明らかになった。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第80回応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"小野寺, 奎"}],"nameIdentifiers":[{"nameIdentifier":"786877","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"鎌田, 憲彦"}],"nameIdentifiers":[{"nameIdentifier":"786878","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"土方, 泰斗"}],"nameIdentifiers":[{"nameIdentifier":"786879","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"786880","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"786881","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"吉江, 徹"}],"nameIdentifiers":[{"nameIdentifier":"786882","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"786883","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"786884","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Below-Gap 励起光を用いたFET 構造4 H SiCの欠陥準位の検出","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Below-Gap 励起光を用いたFET 構造4 H SiCの欠陥準位の検出"},{"subitem_title":"Detection of Defect Levels in 4H SiC FET by Below Gap E xcitation Light","subitem_title_language":"en"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-09-26"},"publish_date":"2019-09-26","publish_status":"0","recid":"76936","relation_version_is_last":true,"title":["Below-Gap 励起光を用いたFET 構造4 H SiCの欠陥準位の検出"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T00:07:36.693894+00:00"}