{"created":"2023-05-15T14:56:41.470494+00:00","id":76935,"links":{},"metadata":{"_buckets":{"deposit":"dc02e933-2148-4a78-af85-c56e6c3d1941"},"_deposit":{"created_by":1,"id":"76935","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"76935"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00076935","sets":["10:28"]},"author_link":["786886","786885","786892","786895","786889","786894","786888","786887","786893","786890","786891"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-09-19","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"   ノーマリーオフ型炭化ケイ素接合型電解効果トランジスタ (SiC JFET) に室温でガンマ線を5.6MGy(H2O)まで照射し、電気特性の変化を調べた。\n照射後試料のドレインリーク電流は10-10A以下の低い電流値に留まっており、ノーマリーオフ動作が維持されていることを確認した。またしきい値電圧の低下も0.1V以下に抑えられ、未照射試料と大きく変わらなかった。\nこれらの結果から、SiCJFETが、MGyオーダーの高線量照射に対して高い放射線耐性を持つことが明らかになった。\n","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第80回応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"786885","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"清水, 奎吾"}],"nameIdentifiers":[{"nameIdentifier":"786886","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"786887","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎, 雄一"}],"nameIdentifiers":[{"nameIdentifier":"786888","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"786889","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"黒木, 伸一郎"}],"nameIdentifiers":[{"nameIdentifier":"786890","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 保宣"}],"nameIdentifiers":[{"nameIdentifier":"786891","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"786892","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"786893","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"786894","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"786895","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"ノーマリーオフ型4H-SiC JFETのガンマ線照射効果","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ノーマリーオフ型4H-SiC JFETのガンマ線照射効果"},{"subitem_title":"Gamma-rays irradiation effect of normally-off 4H-SiC JFETs","subitem_title_language":"en"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-09-26"},"publish_date":"2019-09-26","publish_status":"0","recid":"76935","relation_version_is_last":true,"title":["ノーマリーオフ型4H-SiC JFETのガンマ線照射効果"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T00:07:36.629993+00:00"}