{"created":"2023-05-15T14:56:21.781068+00:00","id":76556,"links":{},"metadata":{"_buckets":{"deposit":"34772da3-69ab-412c-8461-d111775c831e"},"_deposit":{"created_by":1,"id":"76556","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"76556"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00076556","sets":["2"]},"author_link":["996111","996110","996115","996109","996112","996116","996114","996113"],"item_10003_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-08","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"717","bibliographicPageStart":"714","bibliographicVolumeNumber":"963","bibliographic_titles":[{"bibliographic_title":"Materials Science Forum"}]}]},"item_10003_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Quenching effect in the photoluminescence (PL) spectrum of divacancy de-\nfects in 4H SiC is investigated. Quenching in PL is observed when photoexcitation with an energy below a certain threshold is applied. In order to understand this phenomenon, Kohn-Sham density functional theory (DFT) calculations were carried out. In accordance with recent experimental results, we propose a physical model by which the quenching phenomenon can be interepreted.","subitem_description_type":"Abstract"}]},"item_10003_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Trans Tech Publications Ltd"}]},"item_10003_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.4028/www.scientific.net/MSF.963.714","subitem_relation_type_select":"DOI"}}]},"item_10003_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.scientific.net/MSF.963.714","subitem_relation_type_select":"URI"}}]},"item_10003_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1662-9752","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Csore, A."}],"nameIdentifiers":[{"nameIdentifier":"996109","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Magunusson, B."}],"nameIdentifiers":[{"nameIdentifier":"996110","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"T. Son, N."}],"nameIdentifiers":[{"nameIdentifier":"996111","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Gallstrom, A."}],"nameIdentifiers":[{"nameIdentifier":"996112","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"996113","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"G. Ivanov, I."}],"nameIdentifiers":[{"nameIdentifier":"996114","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Gali, A."}],"nameIdentifiers":[{"nameIdentifier":"996115","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"996116","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"First-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiC","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"First-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiC"}]},"item_type_id":"10003","owner":"1","path":["2"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-08-23"},"publish_date":"2019-08-23","publish_status":"0","recid":"76556","relation_version_is_last":true,"title":["First-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiC"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:58:11.869641+00:00"}