@inproceedings{oai:repo.qst.go.jp:00076556,
 author = {Csore, A. and Magunusson, B. and T. Son, N. and Gallstrom, A. and Ohshima, Takeshi and G. Ivanov, I. and Gali, A. and Takeshi, Ohshima},
 book = {Materials Science Forum},
 month = {Aug},
 note = {Quenching effect in the photoluminescence (PL) spectrum of divacancy de-
fects in 4H SiC is investigated. Quenching in PL is observed when photoexcitation with an energy below a certain threshold is applied. In order to understand this phenomenon, Kohn-Sham density functional theory (DFT) calculations were carried out. In accordance with recent experimental results, we propose a physical model by which the quenching phenomenon can be interepreted.},
 pages = {714--717},
 publisher = {Trans Tech Publications Ltd},
 title = {First-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiC},
 volume = {963},
 year = {2019}
}