@inproceedings{oai:repo.qst.go.jp:00076555,
 author = {Inoue, J. and S.-I., Kuroki and Ishikawa, S. and Maeda, T. and Sezaki, H. and Makino, Takahiro and Ohshima, Takeshi and M., Östling and C.-M., Zetterling and Makino, Takahiro and Ohshima, Takeshi},
 book = {Materials Science Forum},
 month = {Jul},
 note = {Low-parasitic-capacitance 4H-SiC pMOSFETs were demonstrated for high-frequency CMOS inverters. In these pMOSFETs, device characteristics including parasitic capacitances were investigated and low parasitic capacitance was achieved by the trench gate structure.},
 pages = {837--840},
 title = {4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters},
 volume = {963},
 year = {2019}
}