@article{oai:repo.qst.go.jp:00076219,
 author = {加田, 渉(群馬大学) and Ivan, Sudić(RBI研) and Natko, Skukan(RBI研) and 川端, 俊介(群馬大学) and 佐藤, 隆博 and 須崎, 純一(㈱デンカ) and 山田, 鈴弥(㈱デンカ) and 関根, 卓洋(群馬大学) and Raj, Kumar Parajuli(群馬大学) and 酒井, 真理(群馬大学) and 三浦, 健太(群馬大学) and 江夏, 昌志(㈱ビームオペレーション) and 神谷, 富裕(群馬大学) and Milko, Jakšić (RBI研) and 花泉, 修(群馬大学) and 山田, 尚人 and Sato, Takahiro and Parajuli, Raj and Yamada, Naoto},
 journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
 month = {Jul},
 note = {Two different types of SiAlON phosphors, namely, α-SiAlON:Eu and β-SiAlON:Eu, that have been developed as scintillators are evaluated for their luminescent properties by ion-beam-induced luminescence (IBIL) analysis
under 2–3-MeV H+-microbeam irradiation. The IBIL spectra show that both α-SiAlON:Eu and β-SiAlON:Eu have bright luminescence similar to that of ZnS:Ag scintillators. The α-SiAlON:Eu and β-SiAlON:Eu IBIL spectra have
peaks at wavelengths of 605 and 540 nm, respectively, which lie in the preferred range of general optical sensors. As the irradiation progresses, the IBIL intensity of conventional ZnS:Ag scintillators decreases sharply, whereas
that of the two SiAlONs remains largely unchanged. Moreover, the thermal resistivity of β-SiAlON:Eu is measured by IBIL under temperature control. The IBIL intensity retains half of its original value at the highest temperature of 773 K. The present experimental results reveal the two different types of SiAlON to be potential candidates for a scintillation monitoring tool for harsh environments in which intense beam irradiation at high temperature can be expected.},
 pages = {157--162},
 title = {Evaluation of scintillation properties of α- and β-SiAlON phosphors under focused microbeam irradiation using ion-beam-induced luminescence analysis},
 volume = {450},
 year = {2019}
}