{"created":"2023-05-15T14:56:00.762654+00:00","id":76067,"links":{},"metadata":{"_buckets":{"deposit":"fba3682d-65f8-4b8a-8cc8-ca7323a85e72"},"_deposit":{"created_by":1,"id":"76067","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"76067"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00076067","sets":["10:29"]},"author_link":["850940","850942","850941","850943"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-06-17","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"IoT（Internet of Things）の普及とともに無線通信用の高周波デバイスやLED・レーザなどの光デバイス、そして各種センサーの高性能化、高機能化も求められている。特に窒化ガリウム（GaN）に代表される窒化物半導体は従来のシリコン（Si）やガリウムヒ素（GaAs）を凌駕する優れた物性値を有しており、IoT関連材料の主役として期待されている。ただし、窒化物半導体にはSiやGaAsにはない特異な歪みや欠陥、表面界面構造など結晶成長の基礎にかかわる多くの謎が取り残されたままであり、デバイス性能の飛躍的な向上のためにも、これら結晶成長メカニズムの理解と制御が急務となっている。我々は結晶成長の様子をライブ観察できる放射光その場X線回折を、微細構造解析プラットフォームを通して外部研究機関に提供し、窒化物半導体のさまざまな結晶成長メカニズムの解明に取り組んでいる。本講演では、放射光その場X線回折を用いて、IoT関連材料の構造解析を行った最近の研究例を紹介する。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"日本顕微鏡学会第７５回学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"850940","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"850941","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Takuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"850942","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahashi, Masamitsu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"850943","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"放射光その場X線回折を用いたIoT関連半導体材料の構造解析","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"放射光その場X線回折を用いたIoT関連半導体材料の構造解析"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-06-20"},"publish_date":"2019-06-20","publish_status":"0","recid":"76067","relation_version_is_last":true,"title":["放射光その場X線回折を用いたIoT関連半導体材料の構造解析"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T22:27:11.543494+00:00"}