{"created":"2023-05-15T14:55:05.356496+00:00","id":74871,"links":{},"metadata":{"_buckets":{"deposit":"1a90438d-69ea-4f55-922b-1807b3b592a7"},"_deposit":{"created_by":1,"id":"74871","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"74871"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00074871","sets":["10:29"]},"author_link":["739883","739881","739882","739880"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-03-11","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"窒化ガリウム（GaN）成長中の表面構造を定量的に捉えることは、エピタキシャル成長の基礎学理を理解する上で重要であるとともに、結晶のさらなる高品質化に向けた設計指針の構築にとっても重要である。とくに分子線エピタキシャル（MBE）成長中のGaN表面は、常に液体Gaによって覆われていることが高品質な結晶を得る条件として知られており、液体GaがGaN表面に対してランダムに吸着しているのか、それともある程度の秩序をもって吸着しているのか、きわめて興味深い。我々はこれまでに、GaN表面上にGaを照射しながらX線Crystal Truncation Rod（CTR）散乱強度をその場測定することによって、Ga極性GaN表面上の液体Ga層の構造を明らかにしている。本研究は同測定手法をN極性GaN表面に適用し、実験とシミュレーションからGaN表面上の液体Ga層の構造を定量的に決定した。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第６６回応用物理学会春季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"739880","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"739881","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Takuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"739882","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahashi, Masamitsu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"739883","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"N極性GaN上の液体Ga層のその場X線構造解析","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"N極性GaN上の液体Ga層のその場X線構造解析"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-03-20"},"publish_date":"2019-03-20","publish_status":"0","recid":"74871","relation_version_is_last":true,"title":["N極性GaN上の液体Ga層のその場X線構造解析"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T07:35:55.042075+00:00"}