{"created":"2023-05-15T14:55:01.933941+00:00","id":74795,"links":{},"metadata":{"_buckets":{"deposit":"b1f3d21e-eb86-4ae0-917e-e13ba0958905"},"_deposit":{"created_by":1,"id":"74795","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"74795"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00074795","sets":["10:28"]},"author_link":["737935","737927","737934","737929","737933","737930","737936","737937","737931","737932","737928"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-03-09","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"  照射線量3.7 MGyまで照射した炭化ケイ素接合型トランジスタ(SiC JFET)のしきい値電圧Vthは、未照射試料とほぼ変わらなかった。またリーク電流や、チャネル領域への欠陥生成による抵抗の著しい増加も確認されなかった。一方、過去に報告されている市販レベル電界効果トランジスタ(MOSFET)では、この程度の線量でもゲート酸化膜への正の固定電荷生成により、照射開始とともに数Vの負電圧側へのシフトが確認されている。以上より、MGyオーダにおけるJFETの高い放射線耐性が確かめられた。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第66回応用物理学会春季学術講演会参加の為","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"737927","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"清水, 奎吾"}],"nameIdentifiers":[{"nameIdentifier":"737928","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"737929","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎, 雄一"}],"nameIdentifiers":[{"nameIdentifier":"737930","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"737931","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"黒木, 伸一郎"}],"nameIdentifiers":[{"nameIdentifier":"737932","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 保宣"}],"nameIdentifiers":[{"nameIdentifier":"737933","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"737934","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"737935","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"737936","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"737937","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"MGy領域における4H-SiC JFETのガンマ線照射効果","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"MGy領域における4H-SiC JFETのガンマ線照射効果"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-03-17"},"publish_date":"2019-03-17","publish_status":"0","recid":"74795","relation_version_is_last":true,"title":["MGy領域における4H-SiC JFETのガンマ線照射効果"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T07:43:22.122059+00:00"}