{"created":"2023-05-15T14:55:01.228973+00:00","id":74779,"links":{},"metadata":{"_buckets":{"deposit":"b6a8a68a-676a-4c8a-9c67-2c483a5dfb11"},"_deposit":{"created_by":1,"id":"74779","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"74779"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00074779","sets":["10:29"]},"author_link":["738027","738026","738032","738030","738029","738028","738031"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-03-11","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"4H -SiC 中の窒素・空孔複合欠陥（NVセンター)の形成におけるイオン ビーム照射量・イオン種依存性について調べた。窒素を含む基板では重イオンほどNVセンターが増加するが、窒素をほとんど含まない基板では窒素が最もNVセンターが多かった。これは打ち込んだ窒素自身がNVセンター形成に寄与するためと考察した。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第66回応用物理学会春季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"楢原, 拓真"}],"nameIdentifiers":[{"nameIdentifier":"738026","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤, 真一郎"}],"nameIdentifiers":[{"nameIdentifier":"738027","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"土方, 泰斗"}],"nameIdentifiers":[{"nameIdentifier":"738028","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"738029","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Narahara, Takuma","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"738030","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Shinichiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"738031","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"738032","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"4H -SiC 中の窒素・空孔複合欠陥の形成におけるイオン ビーム照射の影響","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"4H -SiC 中の窒素・空孔複合欠陥の形成におけるイオン ビーム照射の影響"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-03-18"},"publish_date":"2019-03-18","publish_status":"0","recid":"74779","relation_version_is_last":true,"title":["4H -SiC 中の窒素・空孔複合欠陥の形成におけるイオン ビーム照射の影響"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T07:43:00.907705+00:00"}