{"created":"2023-05-15T14:55:01.140729+00:00","id":74777,"links":{},"metadata":{"_buckets":{"deposit":"f17e5f2f-6f98-4c86-bf99-282622b3ebfc"},"_deposit":{"created_by":1,"id":"74777","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"74777"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00074777","sets":["10:29"]},"author_link":["737988","737987","737989","737993","737994","737991","737990","737995","737996","737992","737997"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-03-11","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"4H-SiC MOSFET チャネルに存在する表面SPSの発光特性ゲート電圧依存性について調べた。MOSFETのしきい値電圧付近で発光強度が増加または減少するSPSが観察された。これは過去の研究例（P8センター)からの類推から、表面SPSの電荷状態がｰ1→ｰ２、0→-1にそれぞれ変化するためと考察した。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第66回応用物理学会春季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"阿部, 裕太"}],"nameIdentifiers":[{"nameIdentifier":"737987","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"梅田享英"}],"nameIdentifiers":[{"nameIdentifier":"737988","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"岡本光央"}],"nameIdentifiers":[{"nameIdentifier":"737989","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"原田信介"}],"nameIdentifiers":[{"nameIdentifier":"737990","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤, 真一郎"}],"nameIdentifiers":[{"nameIdentifier":"737991","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎, 雄一"}],"nameIdentifiers":[{"nameIdentifier":"737992","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"737993","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Abe, Yuta","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"737994","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Shinichiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"737995","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"737996","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"737997","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"4H-SiC MOSFET チャネルの単一光子源のゲート電圧制御（II）","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"4H-SiC MOSFET チャネルの単一光子源のゲート電圧制御（II）"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-03-18"},"publish_date":"2019-03-18","publish_status":"0","recid":"74777","relation_version_is_last":true,"title":["4H-SiC MOSFET チャネルの単一光子源のゲート電圧制御（II）"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T07:43:01.698220+00:00"}