{"created":"2023-05-15T14:54:58.159145+00:00","id":74701,"links":{},"metadata":{"_buckets":{"deposit":"a78cf6d5-79da-431b-a5c5-0d9bec16d0e8"},"_deposit":{"created_by":1,"id":"74701","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"74701"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00074701","sets":["10:28"]},"author_link":["734997","734998","735002","735001","734999","735000"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-03-10","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Si 基板上に種々の機能性薄膜を作製することはデバイス応用にとって重要なプロセスである。例 えば、Fe3O4 (magnetite) はその高いスピン偏極率からスピントロニクスデバイス用材料として期待されている物質であるが、Si 基板上に直接作製した報告は少なく、高品位な薄膜を作製するには Al₂O₃などのバッファー層を使用する方法がとられている 。そこで、筆者らはバッファー層に Al2O3と同様に化学的に安定で、かつ Al2O3よりも Fe₃O₄との格子整合性が高い MgOに着目し、単相のエピタキシャル Fe₃O₄薄膜を作製するために必要な、MgOの高品位膜をSi基板上に作製する条件を探索した。 ","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第66回応用物理学会春季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"山中, 健太"}],"nameIdentifiers":[{"nameIdentifier":"734997","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高野, 健吾"}],"nameIdentifiers":[{"nameIdentifier":"734998","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山口, 憲司"}],"nameIdentifiers":[{"nameIdentifier":"734999","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamanaka, Kenta","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"735000","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takano, Kengo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"735001","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamaguchi, Kenji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"735002","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"バッファー層を用いたSi基板上への高品位鉄酸化物薄膜の作製","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"バッファー層を用いたSi基板上への高品位鉄酸化物薄膜の作製"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-01-19"},"publish_date":"2019-01-19","publish_status":"0","recid":"74701","relation_version_is_last":true,"title":["バッファー層を用いたSi基板上への高品位鉄酸化物薄膜の作製"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T07:54:09.614014+00:00"}