{"created":"2023-05-15T14:54:57.665752+00:00","id":74690,"links":{},"metadata":{"_buckets":{"deposit":"e216efc5-8558-47e8-8ca4-43642b2d59e2"},"_deposit":{"created_by":1,"id":"74690","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"74690"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00074690","sets":["10:28"]},"author_link":["735789","735794","735795","735792","735799","735798","735796","735790","735801","735793","735800","735791","735797"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-03-08","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"紫外～可視光域に吸収帯を持つ立方晶SiC (3C-SiC) を用いた金属-酸化膜-半導体 電界効果トランジスタ (MOSFET) は、耐放射線性CMOSイメージセンサへの応用が期待されているが、作製が難しく、放射線、特に透過力の強いガンマ線への耐性について調べた例は多くない。そこで本研究では、3C-SiC MOSFETの作製技術の確立と、ガンマ線が電気特性に及ぼす影響を調べた。\nSi (100)単結晶基板上に成長した厚さ5µmの3C-SiC (100)エピタキシャル層に、アクセプタであるアルミニウムを濃度5.0×1018 cm3までイオン注入し、p型チャネル層を形成した。MOSFETのソース、ドレイン領域は、ドナーであるリンを高温（500°C）で濃度5.0×10^20 cm-3までイオン注入して形成した。1250°Cでの熱処理により注入されたドナーの活性化を行った後、Wet酸化により厚さ20 nmのゲート酸化膜を形成した。最後にソースおよびドレイン、ゲート電極を形成することで、3C-SiC MOSFETを作製した。この3C-SiC MOSFETに室温、窒素雰囲気中で60Coガンマ線を2MGy照射したところ、リーク電流の著しい増加やしきい値電圧の大きな負電圧シフトは見られず、チャネルを流れる電子の移動度もほぼ変化しなかった。以上より、本研究では3C-SiC MOSFETの作製技術を確立し、ガンマ線照射による特性変化の把握に成功した。\n\n","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"平成30年度生体医歯工学共同研究拠点報告会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"735789","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎, 雄一"}],"nameIdentifiers":[{"nameIdentifier":"735790","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"735791","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"735792","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"永野,  耕平"}],"nameIdentifiers":[{"nameIdentifier":"735793","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"目黒,  達也"}],"nameIdentifiers":[{"nameIdentifier":"735794","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"長谷部,  史明"}],"nameIdentifiers":[{"nameIdentifier":"735795","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"黒木,  伸一郎"}],"nameIdentifiers":[{"nameIdentifier":"735796","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中,  保宣"}],"nameIdentifiers":[{"nameIdentifier":"735797","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"735798","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"735799","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"735800","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"735801","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"ガンマ線照射が3C-SiC MOSFETの電気特性に及ぼす影響","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ガンマ線照射が3C-SiC MOSFETの電気特性に及ぼす影響"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-03-08"},"publish_date":"2019-03-08","publish_status":"0","recid":"74690","relation_version_is_last":true,"title":["ガンマ線照射が3C-SiC MOSFETの電気特性に及ぼす影響"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T07:52:07.695375+00:00"}