@misc{oai:repo.qst.go.jp:00074643,
 author = {佐々木, 明 and Sasaki, Akira},
 month = {Feb},
 note = {Improvement of the resolution, line-edge roughness (LWR), and sensitivity of photoresists have an essential importance for the realization of the extreme ultraviolet (EUV) lithography. We show the image formation of photoresists for the extreme-ultraviolet lithography (EUV) using computer simulation. We develop a combined percolation and diffusion-limited aggregation model to investigate image formation to see how the roughness initially produced by the photon shot noise develops during the process of development., SPIE Advanced Lithography会議出席},
 title = {Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model},
 year = {2019}
}