{"created":"2023-05-15T14:53:40.934951+00:00","id":73105,"links":{},"metadata":{"_buckets":{"deposit":"62e95baa-f42e-4a94-a71c-46414b6831dd"},"_deposit":{"created_by":1,"id":"73105","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"73105"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00073105","sets":["10:28"]},"author_link":["720395","720408","720406","720397","720402","720403","720399","720412","720398","720405","720401","720400","720404","720409","720407","720410","720411","720396"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-12-11","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"　半導体であるGe, GaSb, InSbにイオンビーム照射(例えばGaイオン)を行うと、点欠陥の移動で表面に多孔質構造が形成されるが、Siの場合は形成されない。本研究では、高密度点欠陥生成が可能なC60イオンビームをSi(001)面に対して室温で角度を変えて照射することで、多孔質構造の形成を試みた。また、同じ条件で照射したGe(001)面に形成された構造と比較を行った。その結果、SiとGeのいずれにおいても凹凸構造(表面に対して垂直照射)、ひも状構造(表面に垂直な方向から60度傾けて照射)、リップル構造(同)の3種類の構造形成が確認された。照射量を増やすとひも状構造からリップル状構造に転じることから、前者は後者を形成する過程で得られる構造だと考えられる。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"QST高崎サイエンスフェスタ2018","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"村尾, 吉輝 (高知工科大学)"}],"nameIdentifiers":[{"nameIdentifier":"720395","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"新田, 紀子 (高知工科大学)"}],"nameIdentifiers":[{"nameIdentifier":"720396","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"土田, 秀次 (京都大学)"}],"nameIdentifiers":[{"nameIdentifier":"720397","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"冨田, 成夫 (筑波大学)"}],"nameIdentifiers":[{"nameIdentifier":"720398","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"笹, 公和 (筑波大学)"}],"nameIdentifiers":[{"nameIdentifier":"720399","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"平田, 浩一 (産総研)"}],"nameIdentifiers":[{"nameIdentifier":"720400","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"柴田, 裕実 (大阪大学)"}],"nameIdentifiers":[{"nameIdentifier":"720401","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"星野, 靖 (神奈川大学)"}],"nameIdentifiers":[{"nameIdentifier":"720402","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"平野, 貴美"}],"nameIdentifiers":[{"nameIdentifier":"720403","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山田, 圭介"}],"nameIdentifiers":[{"nameIdentifier":"720404","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"千葉, 敦也"}],"nameIdentifiers":[{"nameIdentifier":"720405","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"齋藤, 勇一"}],"nameIdentifiers":[{"nameIdentifier":"720406","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"鳴海, 一雅"}],"nameIdentifiers":[{"nameIdentifier":"720407","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"平野 貴美","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"720408","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山田 圭介","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"720409","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"千葉 敦也","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"720410","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"齋藤 勇一","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"720411","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"鳴海 一雅","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"720412","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"C60クラスターイオンビームを照射したSiとGeの表面構造","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"C60クラスターイオンビームを照射したSiとGeの表面構造"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-12-19"},"publish_date":"2018-12-19","publish_status":"0","recid":"73105","relation_version_is_last":true,"title":["C60クラスターイオンビームを照射したSiとGeの表面構造"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:32:49.304816+00:00"}