{"created":"2023-05-15T14:53:39.424244+00:00","id":73071,"links":{},"metadata":{"_buckets":{"deposit":"356e855c-34d4-4a6c-b1a1-8d7eac5426c6"},"_deposit":{"created_by":1,"id":"73071","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"73071"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00073071","sets":["10:28"]},"author_link":["720069","720068","720066","720070","720071","720067"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-12-07","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Fe3O4 (magnetite) はその高いスピン偏極率からスピントロニクスデバイス用材料として期待されている物質である。Fe3O4薄膜のデバイスへの応用として、本研究ではSi基板上に高配向したFe3O4の成膜を目指している。実験結果によると、Fe3O4膜をSi基板上に直接作製した場合、単相膜を得ることは困難であり、基板のSi原子とFeやOと反応物相の生成も認められた。そこで、現在薄膜と基板の間にバッファー層を挿入することによる成膜への影響を調べている。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"日本分析化学会関東支部「第15回茨城地区分析技術交流会」","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"山中, 健太"}],"nameIdentifiers":[{"nameIdentifier":"720066","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高野, 健吾"}],"nameIdentifiers":[{"nameIdentifier":"720067","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山口, 憲司"}],"nameIdentifiers":[{"nameIdentifier":"720068","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山中 健太","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"720069","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高野 健吾","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"720070","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山口 憲司","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"720071","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"シリコン基板上への高品位鉄酸化物薄膜の作製","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"シリコン基板上への高品位鉄酸化物薄膜の作製"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-12-08"},"publish_date":"2018-12-08","publish_status":"0","recid":"73071","relation_version_is_last":true,"title":["シリコン基板上への高品位鉄酸化物薄膜の作製"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:33:10.426121+00:00"}