{"created":"2023-05-15T14:53:38.164342+00:00","id":73042,"links":{},"metadata":{"_buckets":{"deposit":"a5b36443-f65c-4f05-ad8b-3f04f31f69a0"},"_deposit":{"created_by":1,"id":"73042","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"73042"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00073042","sets":["10:28"]},"author_link":["719812","719807","719814","719815","719810","719816","719813","719808","719811","719809","719817"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-11-08","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Silicon carbide (SiC) devices are promising as radiation tolerant electronics, since trap generation and charge accumulation by irradiation are suppressed compared with Si devices. However, negative shift of threshold voltage (Vth) of SiC metal-oxide-semiconductor (MOSFET), which is caused by accumulation of holes (positive charges) generated in the gate dielectric (SiO2) by irradiation is a common problem for practical application. SiC junction field effect transistor (JFET), whose gate region is composed of p-n junction is expected to show no negative shift of Vth, while radiation response of SiC JFETs is still unclear. In this study, n-channel depletion mode JFET with nominal channel length and width, and gate length are 2.2 and 0.6, and 18 m (fabricated by AIST ) were irradiated   with gamma-rays up to 2.2 MGy at room temperature in nitrogen atmosphere. With increasing dose, Vth gradually shift toward positive voltage side by approximately 1 V. Theoretical expression of JFET suggest that positive shift of Vth is attributed to decrease of carrier density by defects formed in channel region. ","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第3回生体医歯光学共同研究拠点国際シンポジウム参加の為","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Takeyama, Akinori"}],"nameIdentifiers":[{"nameIdentifier":"719807","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shimizu, Keigo"}],"nameIdentifiers":[{"nameIdentifier":"719808","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro"}],"nameIdentifiers":[{"nameIdentifier":"719809","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi"}],"nameIdentifiers":[{"nameIdentifier":"719810","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"719811","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuroki, Shin-ichiro"}],"nameIdentifiers":[{"nameIdentifier":"719812","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tanaka, Yasunori"}],"nameIdentifiers":[{"nameIdentifier":"719813","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山 昭憲","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"719814","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"719815","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎 雄一","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"719816","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"719817","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Electrical characteristics of gamma-ray irradiated 4H-SiC JFETs","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Electrical characteristics of gamma-ray irradiated 4H-SiC JFETs"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-11-20"},"publish_date":"2018-11-20","publish_status":"0","recid":"73042","relation_version_is_last":true,"title":["Electrical characteristics of gamma-ray irradiated 4H-SiC JFETs"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:33:28.019052+00:00"}