@misc{oai:repo.qst.go.jp:00073042,
 author = {Takeyama, Akinori and Shimizu, Keigo and Makino, Takahiro and Yamazaki, Yuichi and Ohshima, Takeshi and Kuroki, Shin-ichiro and Tanaka, Yasunori and 武山 昭憲 and 牧野 高紘 and 山崎 雄一 and 大島 武},
 month = {Nov},
 note = {Silicon carbide (SiC) devices are promising as radiation tolerant electronics, since trap generation and charge accumulation by irradiation are suppressed compared with Si devices. However, negative shift of threshold voltage (Vth) of SiC metal-oxide-semiconductor (MOSFET), which is caused by accumulation of holes (positive charges) generated in the gate dielectric (SiO2) by irradiation is a common problem for practical application. SiC junction field effect transistor (JFET), whose gate region is composed of p-n junction is expected to show no negative shift of Vth, while radiation response of SiC JFETs is still unclear. In this study, n-channel depletion mode JFET with nominal channel length and width, and gate length are 2.2 and 0.6, and 18 m (fabricated by AIST ) were irradiated   with gamma-rays up to 2.2 MGy at room temperature in nitrogen atmosphere. With increasing dose, Vth gradually shift toward positive voltage side by approximately 1 V. Theoretical expression of JFET suggest that positive shift of Vth is attributed to decrease of carrier density by defects formed in channel region., 第3回生体医歯光学共同研究拠点国際シンポジウム参加の為},
 title = {Electrical characteristics of gamma-ray irradiated 4H-SiC JFETs},
 year = {2018}
}