{"created":"2023-05-15T14:53:37.904454+00:00","id":73036,"links":{},"metadata":{"_buckets":{"deposit":"310dff6e-6d8d-44c3-bbaf-dfc2df25738b"},"_deposit":{"created_by":1,"id":"73036","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"73036"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00073036","sets":["10:28"]},"author_link":["719750","719747","719757","719754","719749","719756","719748","719755","719751","719752","719753"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-11-05","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"炭化ケイ素 (SiC) を利用した電子デバイスは、原子力施設の廃止措置における強い放射線環境下で長時間、安定して動作するパワー半導体やセンサ素子への応用が期待されている。SiC接合型電解効果トランジスタ (JFET) は、代表的なSiCスイッチングデバイスである金属-酸化膜-半導体 (MOS) FETのようにゲート酸化膜を持たないため、ガンマ線照射による酸化膜の帯電とそれに伴う電気特性の劣化が抑制できる。しかし実際の作業で想定されるMGy線領域における照射効果は明らかでないため、試作したnチャネル横型SiC JFET（ゲート長36μmおよび72μm）に室温でガンマ線を線量率10 kGy/hで総線量2.4MGyまで照射し、二つのサンプルの電気特性を比較することで、劣化挙動の把握を行った。その結果、試作したSiCJFET構造では、MGy領域でのガンマ線照射効果はVthの増加とgmの低下であることが明らかになった。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"先進パワー半導体分科会第5回講演会参加の為","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"719747","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"清水, 奎吾"}],"nameIdentifiers":[{"nameIdentifier":"719748","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"719749","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎, 雄一"}],"nameIdentifiers":[{"nameIdentifier":"719750","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"719751","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"黒木, 伸一郎"}],"nameIdentifiers":[{"nameIdentifier":"719752","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 保宣"}],"nameIdentifiers":[{"nameIdentifier":"719753","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山 昭憲","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"719754","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"719755","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎 雄一","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"719756","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"719757","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"4H-SiC JFETのガンマ線耐性評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"4H-SiC JFETのガンマ線耐性評価"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-11-20"},"publish_date":"2018-11-20","publish_status":"0","recid":"73036","relation_version_is_last":true,"title":["4H-SiC JFETのガンマ線耐性評価"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:33:29.280883+00:00"}