@misc{oai:repo.qst.go.jp:00072973,
 author = {石野, 雅彦 and タンフン, ヂン and 長谷川, 登 and Sakaue, Kazuyuki and Higashiguchi, Takeshi and Ichimaru, Satoshi and Hatayama, Masataka and Washio, Masakazu and Nishikino, Masaharu and Kawachi, Tetsuya and 石野 雅彦 and タンフン ヂン and 長谷川 登 and 錦野 将元 and 河内 哲哉},
 month = {Oct},
 note = {In presentation, we report on development of an extreme ultraviolet (EUV) laser irradiation system at QST. EUV laser has a wavelength of 13.9 nm, and this laser wavelength is close to the wavelength of EUV lithography (λ = 13.5 nm). The irradiation system has an intensity monitor based on the Mo/Si multilayer beam splitter. This intensity monitor provides the irradiation energy onto sample surface. So it is possible to examine and confirm damage/ablation thresholds of optical elements and doses for sensitivity of resist materials, which have the same specifications of those in the EUV lithography., 16th International Conference on X-Ray Lasers (ICXRL 2018)},
 title = {EUV laser irradiation system with intensity monitor},
 year = {2018}
}