{"created":"2023-05-15T14:53:34.296514+00:00","id":72953,"links":{},"metadata":{"_buckets":{"deposit":"2aec8138-bd78-453d-a4ef-a9fc07268dfb"},"_deposit":{"created_by":1,"id":"72953","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"72953"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00072953","sets":["10:28"]},"author_link":["718844","718841","718843","718839","718847","718837","718842","718845","718840","718846","718838"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-09-21","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"シリコン(Si)に比べ耐放射線性に優れる炭化ケイ素 (SiC) を利用した電子デバイスは、原子力施設における事故収束作業など強い放射線環境下で長時間、安定して動作するセンサ等への応用が期待されている。SiC接合型電解効果トランジスタ (JFET) は、代表的なSiCスイッチングデバイスである金属-酸化膜-半導体 (MOS) FETと異なりゲート酸化膜を持たないため、照射で生成する酸化膜固定電荷による、しきい値電圧の負電圧側シフトの抑制が期待できる。そこで、ガンマ線照射がSiC JFETの電気特性に及ぼす影響について調べた。産総研で作製されたnチャネル横型JFET(チャネル長2.2m、幅 0.6 m)に対し窒素雰囲気中、室温にて60Coガンマ線(線量率10 kGy/h)を2.2 MGy (SiO2)まで照射した。照射後、ドレイン電圧を3 V印加しながらドレイン電流 (ID)-ゲート電圧 (VG) 特性を測定し、しきい値電圧 (Vth)を求めた。その結果、照射に伴いVthの増加が見られた。理論式を用いた検討により、Vthの増加は、ガンマ線照射でチャネル領域に生成したトラップによるキャリア電子の捕獲とキャリア密度低下で説明できることがわかった。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第79回応用物理学会秋季学術講演発表参加の為","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"718837","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"清水, 奎吾"}],"nameIdentifiers":[{"nameIdentifier":"718838","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"718839","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎, 雄一"}],"nameIdentifiers":[{"nameIdentifier":"718840","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"718841","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"黒木, 伸一郎"}],"nameIdentifiers":[{"nameIdentifier":"718842","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 保宣"}],"nameIdentifiers":[{"nameIdentifier":"718843","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山 昭憲","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"718844","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"718845","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎 雄一","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"718846","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"718847","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"4H-SiC JFETへのガンマ線照射効果","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"4H-SiC JFETへのガンマ線照射効果"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-09-25"},"publish_date":"2018-09-25","publish_status":"0","recid":"72953","relation_version_is_last":true,"title":["4H-SiC JFETへのガンマ線照射効果"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:34:18.414505+00:00"}