{"created":"2023-05-15T14:53:30.478368+00:00","id":72866,"links":{},"metadata":{"_buckets":{"deposit":"d0dd2e44-687f-4cf6-bb78-dafad32994d0"},"_deposit":{"created_by":1,"id":"72866","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"72866"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00072866","sets":["10:28"]},"author_link":["717977","717980","717982","717979","717981","717978"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-07-12","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"私たちは窒化ガリウム（GaN）成長中のGaN表面がどのような構造をしているのか、その実際の姿を定量的に捉えることで、窒化物半導体エピタキシャル成長の基礎学理を理解し、結晶のさらなる高品質化に向けた成長技術の開発を目指している。とくに分子線エピタキシャル（MBE）成長中のGaN表面は、常に液体Gaによって覆われていることが高品質結晶を得る条件として知られており、液体GaがGaN表面に対してランダムに吸着しているのか、それともある程度の秩序をもっているのか、きわめて興味深い。最近、私たちは反射高速電子線回折（RHEED）強度とCrystal Truncation Rod（CTR）散乱強度を同時にその場測定することで、GaN表面上にある2ML程度のGa吸着層が表面垂直方向にも面内方向にも秩序をもっていることを突き止めている。本研究は、Ga吸着層の構造をより定量的に検討するため、その場測定で得られたCTR散乱強度に対して、構造モデルのシミュレーションをおこなった。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"日本結晶成長学会ナノ構造・エピタキシャル成長分科会 第１０回　ナノ構造・エピタキシャル成長講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"717977","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"岩田, 卓也"}],"nameIdentifiers":[{"nameIdentifier":"717978","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"717979","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 拓生","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"717980","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"岩田 卓也","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"717981","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"717982","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"GaN表面上Ga吸着層の構造解析","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"GaN表面上Ga吸着層の構造解析"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-07-17"},"publish_date":"2018-07-17","publish_status":"0","recid":"72866","relation_version_is_last":true,"title":["GaN表面上Ga吸着層の構造解析"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:35:14.107240+00:00"}