{"created":"2023-05-15T14:53:24.629576+00:00","id":72733,"links":{},"metadata":{"_buckets":{"deposit":"fb168d15-0120-4a5c-8253-49e7ed3809d8"},"_deposit":{"created_by":1,"id":"72733","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"72733"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00072733","sets":["10:28"]},"author_link":["716378","716379","716384","716383","716380","716377","716382","716376","716381"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-09-04","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"放射線入射によって半導体デバイス内に誘起される電荷のデバイス内部での輸送過程には未だ不明な点が多く、その解明が急務となっている。本研究では、ゲート構造の異なるSiC-MOSFETにサイクロトロンからの重イオンをそれぞれ照射し、デバイス内部に誘起される電荷の量を測定することで、イオン誘起電荷量のデバイス構造依存性を調べた。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第78回応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"高野, 修平"}],"nameIdentifiers":[{"nameIdentifier":"716376","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"716377","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"原田, 信介"}],"nameIdentifiers":[{"nameIdentifier":"716378","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"児島, 一総"}],"nameIdentifiers":[{"nameIdentifier":"716379","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"土方, 泰斗"}],"nameIdentifiers":[{"nameIdentifier":"716380","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"716381","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高野 修平","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"716382","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"716383","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"716384","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"SiCパワーMOSFETにおける重イオン誘起電荷収集のデバイス構造依存性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"SiCパワーMOSFETにおける重イオン誘起電荷収集のデバイス構造依存性"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-03-26"},"publish_date":"2018-03-26","publish_status":"0","recid":"72733","relation_version_is_last":true,"title":["SiCパワーMOSFETにおける重イオン誘起電荷収集のデバイス構造依存性"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:36:39.886223+00:00"}