{"created":"2023-05-15T14:53:24.500083+00:00","id":72730,"links":{},"metadata":{"_buckets":{"deposit":"5f54ab0d-9973-4701-aafc-fb5296dc5c62"},"_deposit":{"created_by":1,"id":"72730","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"72730"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00072730","sets":["10:28"]},"author_link":["818091","818088","818096","818090","818097","818094","818092","818089","818093","818098","818095","818087"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-03-17","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The low spin signal and tiny magneto-resistance is becoming a central issue in graphene-spintronic devices [1] in which conventional ferromagnets (FMs) such as Ni, Co, Fe of low spin polarization were used. Adopting highly spin-polarized material such as half-metal into graphene/FM heterostructure can be the most effective way to enhance the performance of graphene-spintronics device, experimental demonstration, however, is still lacking. This study, for the first time, reports a new heterostructure consisting of a single layer graphene (SLG) synthesized by high-vacuum chemical vapor deposition (CVD) on Co2FeGe0.5Ga0.5 (CFGG) Heusler alloy whose half-metallicity has been confirmed experimentally [2].\n  CFGG layer with a thickness of 50 nm was epitaxially grown on a MgO(001) single-crystal substrate by magnetron sputtering at room temperature. The CFGG/MgO sample was then transferred into a CVD chamber for graphene synthesis. SLG was successfully synthesized on CFGG by optimizing the CVD process. Fig. 1 shows the STM image taken from the synthesized SLG/CFGG heterostructure, which reveals an epitaxial growth of SLG on CFGG. Due the large lattice-mismatch between CFGG and graphene, moiré pattern of graphene is observed. Fig. 2 shows the C K-edge XAS spectra of the SLG/CFGG heterostructure obtained by changing the incidence angle of a linearly polarized x-ray beam. The peak intensity from the π* and σ* state of graphene shows an opposite behavior of incidence-angle dependence, convincing the formation of a graphitic structure. Strikingly, the peak from the π* state of grapene observed here is very sharp, indicating a weak chemical bonding between graphene and CFGG. It makes the SLG/CFGG heterostructure unique from other graphene/FM systems such as SLG/Ni, Co, Fe which have received intensive studies so far. The quasi-freestanding nature of graphene on CFGG makes the SLG/CFGG heterostructure extremely promising for high-performance spintronic devices.\n[1] Han et al. Nat. Nanotechnol. 9, 794-807 (2014); [2] Li et al. Appl. Phys. Lett. 103, 042405 (2013).\n","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第65回応用物理学会春季講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"李, 松田"}],"nameIdentifiers":[{"nameIdentifier":"818087","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"境, 誠司"}],"nameIdentifiers":[{"nameIdentifier":"818088","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"圓谷, 志郎"}],"nameIdentifiers":[{"nameIdentifier":"818089","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Naramoto, Hiroshi"}],"nameIdentifiers":[{"nameIdentifier":"818090","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"渡邉, 貴弘"}],"nameIdentifiers":[{"nameIdentifier":"818091","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"桜庭裕弥"}],"nameIdentifiers":[{"nameIdentifier":"818092","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"雨宮, 健太"}],"nameIdentifiers":[{"nameIdentifier":"818093","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"B. Sorokin, Pavel"}],"nameIdentifiers":[{"nameIdentifier":"818094","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Songtian, Li","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"818095","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sakai, Seiji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"818096","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Entani, Shiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"818097","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Naramoto, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"818098","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"First Direct Synthesis of Graphene/Half-metallic Heusler Alloy Heterostructure for Spintronic Device Applications","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"First Direct Synthesis of Graphene/Half-metallic Heusler Alloy Heterostructure for Spintronic Device Applications"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-02-20"},"publish_date":"2018-02-20","publish_status":"0","recid":"72730","relation_version_is_last":true,"title":["First Direct Synthesis of Graphene/Half-metallic Heusler Alloy Heterostructure for Spintronic Device Applications"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:23:21.091286+00:00"}