{"created":"2023-05-15T14:53:24.365172+00:00","id":72727,"links":{},"metadata":{"_buckets":{"deposit":"8569ac8b-38d7-4ff8-9878-5132d8e4c2fa"},"_deposit":{"created_by":1,"id":"72727","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"72727"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00072727","sets":["10:28"]},"author_link":["716326","716321","716328","716323","716322","716325","716327","716329","716324"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-11-01","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"SiCはパワーデバイスとしてだけではなく、放射線環境のような極限環境においても安定して動作する半導体材料として期待されている。本研究では、燃料デブリ取り出し作業など高線量環境下において動作するイメージセンサ開発のため、特に放射線による特性劣化の影響を受けにくい接合型トランジスタ（JFET）を作製し、その電気的特性の評価を行った。\nゲート深さをWg=0.51µm、0.58µmと変えて作製したJFETのしきい値電圧はそれぞれ-16と-9Vとなり、ゲート深さでしきい値電圧を制御できることがわかった。事前にシミュレーションした結果とは異なり、しきい値電圧が負となりノーマリーオンとなってしまう原因としては、p型基板上に成長させたn層の不純物濃度やゲート深さ等がシミュレーションと実際に試作したデバイスで異なることが原因と考えられる。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"先進パワー半導体分科会 第 4 回講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"清水, 奎吾"}],"nameIdentifiers":[{"nameIdentifier":"716321","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 保宣"}],"nameIdentifiers":[{"nameIdentifier":"716322","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"黒木, 伸一郎"}],"nameIdentifiers":[{"nameIdentifier":"716323","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"716324","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"716325","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"716326","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"716327","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山 昭憲","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"716328","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"716329","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"4H-SiC 横型JFET の試作と特性の評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"4H-SiC 横型JFET の試作と特性の評価"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-03-24"},"publish_date":"2018-03-24","publish_status":"0","recid":"72727","relation_version_is_last":true,"title":["4H-SiC 横型JFET の試作と特性の評価"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:36:43.184726+00:00"}