{"created":"2023-05-15T14:53:24.317575+00:00","id":72726,"links":{},"metadata":{"_buckets":{"deposit":"b24f16aa-6f6e-4bfc-b624-c162da0c640d"},"_deposit":{"created_by":1,"id":"72726","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"72726"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00072726","sets":["10:28"]},"author_link":["716320","716318","716312","716315","716313","716314","716317","716316","716319"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-11-01","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"原子力発電所の廃炉処理においては、耐放射線性の高いエレクトロニクスが求められており、特に遠隔作業に必要となる半導体イメージセンサが必要とされている。通常イメージセンサはSiデバイスで構築されるが、使用範囲は0.1 KGyオーダであり、より耐放射線性の高い半導体材料を用いデバイス構築が必要である。3C-SiCは紫外光領域を中心に吸収をもつため、フォトダイオードとMOSFETsを同一基板上に形成し、イメージセンサが構成可能であり、本研究ではその要素素子である3C-SiC MOSFETsを作製し、1– 30 Mradの範囲でガンマ線照射を行い、その電気特性変化について評価を行った。\nゲート長L=10[μm]、ゲート幅W=20[μm]のnMOSFETのId-Vg特性から、照射によるしきい値電圧の最大0.7 V程度の負電圧シフトとリーク電流の増加を確認した。移動度は低線量域では移増加したが、30Mradでは大きく減少した。照射による特性劣化の主な原因としては、チャネル部分へのアクセプタ型の欠陥発生が考えられる。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"先進パワー半導体分科会 第4回講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"永野, 耕平"}],"nameIdentifiers":[{"nameIdentifier":"716312","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"目黒, 達也"}],"nameIdentifiers":[{"nameIdentifier":"716313","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"716314","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"716315","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"716316","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中 保宣"}],"nameIdentifiers":[{"nameIdentifier":"716317","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山 昭憲","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"716318","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"716319","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"716320","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"3C-SiC nMOSFETs へのガンマ線曝露効果","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"3C-SiC nMOSFETs へのガンマ線曝露効果"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-03-24"},"publish_date":"2018-03-24","publish_status":"0","recid":"72726","relation_version_is_last":true,"title":["3C-SiC nMOSFETs へのガンマ線曝露効果"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:36:43.812192+00:00"}