{"created":"2023-05-15T14:53:14.981062+00:00","id":72542,"links":{},"metadata":{"_buckets":{"deposit":"bf3fc1d5-3ff5-4a92-aa0f-71478f513bfa"},"_deposit":{"created_by":1,"id":"72542","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"72542"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00072542","sets":["10:28"]},"author_link":["714435","714430","714431","714434","714432","714433"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-11-21","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"CVDダイヤモンド薄膜は、高エネルギー粒子線検出器材料への応用が期待されているが、放射線誘起欠陥やネイティブ欠陥が電気特性に及ぼす影響は明らかになっていない。ホウ素ドープ（p型）および半絶縁性CVDダイヤモンドに1 MeV陽子線を最大1×1013 cm-2照射し、DLTS法およびα線誘起過渡電荷分光(QTS)法を用いて欠陥準位の同定を行った。p型CVDダイヤモンドのDLTS測定から、ネイティブ欠陥として0.6 eV、1.3 eVのアクセプタ準位がそれぞれ6×1013 cm-3、5×1014 cm-3観測された。当日はQTS、電流・電圧特性、容量・電圧特性の結果も交えて欠陥準位の影響を議論する。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第31回ダイヤモンドシンポジウム","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐藤, 真一郎"}],"nameIdentifiers":[{"nameIdentifier":"714430","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"梅沢, 仁"}],"nameIdentifiers":[{"nameIdentifier":"714431","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"杢野, 由明"}],"nameIdentifiers":[{"nameIdentifier":"714432","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"714433","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤 真一郎","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"714434","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"714435","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"陽子線照射された単結晶CVDダイヤモンドの欠陥評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"陽子線照射された単結晶CVDダイヤモンドの欠陥評価"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-11-24"},"publish_date":"2017-11-24","publish_status":"0","recid":"72542","relation_version_is_last":true,"title":["陽子線照射された単結晶CVDダイヤモンドの欠陥評価"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:38:39.714336+00:00"}