@misc{oai:repo.qst.go.jp:00072517,
 author = {Tsunemi, Hiroki and Honda, Tomoya and Makino, Takahiro and Onoda, Shinobu and Sato, Shinichiro and Hijikata, Yasuto and Ohshima, Takeshi and 常見 大貴 and 本多 智也 and 牧野 高紘 and 小野田 忍 and 佐藤 真一郎 and 大島 武},
 month = {Sep},
 note = {Luminescence centers formed in the vicinity of SiC surface are expected to be utilized as Single Photon Sources (SPSs) because of the high-brightness and the potential of electric control at room temperature. In order to gain more insight into the surface SPSs, 4H-SiC pin-diodes are fabricated and the surface SPSs formed in the pin diodes are investigated using a confocal laser scanning fluorescence microscope (CFM). Locations where the surface SPSs appear as well as photoluminescence spectra of the observed surface SPSs are presented. Antibunching characteristics of the surface SPSs are also investigated by the second order autocorrelation function measurement. We conclude that two different types of surface SPSs appear in the surface of 4H-SiC. The location dependence of the observed surface SPSs indicates that oxide layer on 4H-SiC plays an important role in the formation of surface SPSs, whereas neither ion implantation nor donor ions affected. The peak wavelength of luminescence spectra widely varies depending on their locations, indicating lattice strain introduced by the oxide layer has the potential to affect the luminescence spectra., International Conference on Silicon Carbide and Related Materials 2017},
 title = {Various single photon sources observed in SiC pin diodes},
 year = {2017}
}