{"created":"2023-05-15T14:53:06.439497+00:00","id":72416,"links":{},"metadata":{"_buckets":{"deposit":"499725d5-019e-450b-87e5-fc6bd6c72578"},"_deposit":{"created_by":1,"id":"72416","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"72416"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00072416","sets":["10:28"]},"author_link":["713286","713287","713291","713290","713289","713288","713292"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-08-01","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"希土類ドープ窒化ガリウム半導体は狭い線幅と高い発光効率から、室温で動作する単一光子源や固体量子ビットへの応用が期待されている。しかし、その実現のためには、まず、単一希土類の観測に必要となる要素を検討し、GaN基板の選定、イオン注入条件やその後の熱処理条件の最適化が必要であることから、今回は、それら最適条件について報告する。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"29thICDS参加・発表のため","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐藤, 真一郎"}],"nameIdentifiers":[{"nameIdentifier":"713286","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Okada, Hiroshi"}],"nameIdentifiers":[{"nameIdentifier":"713287","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Deki, Manato"}],"nameIdentifiers":[{"nameIdentifier":"713288","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Wakahara, Akihiro"}],"nameIdentifiers":[{"nameIdentifier":"713289","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"713290","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤 真一郎","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"713291","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"713292","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Optimization of Praseodymium-Implanted GaN for Single-Photon Emission","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Optimization of Praseodymium-Implanted GaN for Single-Photon Emission"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-08-17"},"publish_date":"2017-08-17","publish_status":"0","recid":"72416","relation_version_is_last":true,"title":["Optimization of Praseodymium-Implanted GaN for Single-Photon Emission"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:40:04.702394+00:00"}