{"created":"2023-05-15T14:53:04.271841+00:00","id":72383,"links":{},"metadata":{"_buckets":{"deposit":"7b006e0b-4fcc-4fa3-b9d6-f507655a658a"},"_deposit":{"created_by":1,"id":"72383","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"72383"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00072383","sets":["10:28"]},"author_link":["712965","712966","712967","712964"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-07-01","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"放射光施設SPring-8(BL11XU)では窒化物半導体用のＭＢＥ装置とＸ線回折計をドッキングした独自のその場Ｘ線回折装置を開発し、これまでに窒化物半導体の結晶成長の素過程、特に成長初期における特異構造の探索を行っている。今回は成長初期構造に関する最近の研究成果を２つ（GaN薄膜の特異格子変形、GaN薄膜成長の表面構造）紹介する。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"平成29年度新学術領域「特異構造の結晶科学」領域全体会議","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"712964","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"712965","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"712966","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 拓生","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"712967","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"窒化物半導体の成長初期構造の放射光解析","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"窒化物半導体の成長初期構造の放射光解析"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-07-18"},"publish_date":"2017-07-18","publish_status":"0","recid":"72383","relation_version_is_last":true,"title":["窒化物半導体の成長初期構造の放射光解析"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:40:26.982241+00:00"}