{"created":"2023-05-15T14:53:04.206557+00:00","id":72382,"links":{},"metadata":{"_buckets":{"deposit":"d58e5e44-3749-4ee0-9166-233463fd30ac"},"_deposit":{"created_by":1,"id":"72382","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"72382"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00072382","sets":["10:28"]},"author_link":["712962","712963","712960","712961"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-07-13","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"エピタキシャル膜の成長フロントとなる表面の形態は、結晶品質の良し悪しに影響するため、素子応用の観点からも重要であり、これまでにも詳細な理解が望まれてきた。特に、窒化ガリウム（GaN）の分子線エピタキシャル成長では、電子線回折や表面脱離元素量の報告から、表面に2原子層ほど液体状に存在する、いわゆるGa金属原子層（Ga-bilayer）の存在が重要であることが定説となっている。ただし、従来の測定手法では、このGa-bilayerのような非常に薄い層の形態を原子レベルで明らかにするには限界があった。本研究は、三次元結晶からのブラッグ反射に比べて散乱強度は著しく小さいものの、表面形態の違いに顕著なCrystal Truncation Rod（CTR）散乱測定を、GaN成長表面に適用する。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第9回ナノ構造・エピタキシャル成長講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"712960","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"712961","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 拓生","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"712962","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"712963","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"窒化ガリウム結晶成長表面のCTR散乱測定","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"窒化ガリウム結晶成長表面のCTR散乱測定"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-07-18"},"publish_date":"2017-07-18","publish_status":"0","recid":"72382","relation_version_is_last":true,"title":["窒化ガリウム結晶成長表面のCTR散乱測定"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:40:27.829881+00:00"}