@misc{oai:repo.qst.go.jp:00072106,
 author = {Ishii, Satoshi and Toki, Junpei and Konishi, Teruaki and Oikawa, Masakazu and 小西 輝昭 and 及川 将一},
 month = {Dec},
 note = {Carbon-Nanotube-network transistor exhibits a large radiation tolerance, and has potentials to be applied to radiation-resistance devices. In our previous work, we have reported that the CNT-network transistors are applicable in use in very high dose gamma-ray field with the total dose up to 30 kGy.[1] In this work, we extended our studies to investigate the electrical properties of CNT-network transistors against protons. For irradaition, SPICE-NIRS microbeam [2] was used to target CNT-network transistor (100 x 20 µm2) with a beam size of 200 µm2 in diameter. Protons at the CNNT layer were calculated to be 3.34 MeV with the beam intensity (protons per second) controlled to be 5.0x104, or 5.0 x105 within ± 5 % deviation. Irradiation was conducted at the drain voltage of -1 V under positive and negative gate bias in air.  The drain current of the device was increased gradually for positive gate bias during the irradiation, and then decreased gradually after the irradiation stopped. In contrast, the drain current was decreased gradually for negative gate bias during the irradiation, and then increased gradually after the irradiation was stopped. These changes caused by the irradiation suggested that the irradiated proton formed the negative charges near the CNT/gate insulator interfaces.
[1] Ishii S et al., Physica Section E, in press 
[2] Konishi T et al., J Radiat Res, 54: 736-747 (2013), International Workshop on Superconductivity  and Related Functional Materials 2016},
 title = {Electrical Properties of Carbon-Nanotube-Network Transistors during Proton-Micro-Beam Irradiation},
 year = {2016}
}