{"created":"2023-05-15T14:52:44.300619+00:00","id":72004,"links":{},"metadata":{"_buckets":{"deposit":"f408eac9-72dd-4a0d-b228-92486b6b8429"},"_deposit":{"created_by":1,"id":"72004","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"72004"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00072004","sets":["10:28"]},"author_link":["709238","709234","709233","709236","709231","709239","709237","709232","709240","709235"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2016-08-08","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"酸化セリウム(CeOx)に担持させた白金（Pt）触媒は、その界面欠陥構造に起因して酸素還元活性の向上が期待されている。本研究では、結晶面方位の異なるCeO2膜モデル試料の作製を目的に、成膜中の基板温度等によるCeO2膜のエピタキシャル成長への影響について調べた。実験では、サファイア基板（C、R面）に成膜速度、成膜中の基板温度（150～500℃）、成膜後の大気中熱処理温度（400～1000℃）をパラメータにCeO2膜を形成し、結晶構造等をX線回折法、ラザフォード後方散乱／チャネリング法により評価した。その結果、C、R面のサファイア基板に対してCeO2膜の面方位を（100)、(100)／(111)混在、(111)と選択的に制御できる形成条件を明らかにした。特に低い蒸着速度（0.14 nm/min）と基板温度(150℃)、さらに熱処理温度（1000℃）でC面のサファイア基板に成膜した場合、熱的に安定なCeO2(111)よりもCeO2（100)が優先して成長するなど新たな知見が得られた。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第18回結晶成長国際会議(ICCGE-18)発表のため","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"山本, 春也"}],"nameIdentifiers":[{"nameIdentifier":"709231","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"杉本, 雅樹"}],"nameIdentifiers":[{"nameIdentifier":"709232","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"越川, 博"}],"nameIdentifiers":[{"nameIdentifier":"709233","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"箱田, 照幸"}],"nameIdentifiers":[{"nameIdentifier":"709234","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"八巻, 徹也"}],"nameIdentifiers":[{"nameIdentifier":"709235","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山本 春也","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"709236","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"杉本 雅樹","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"709237","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"越川 博","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"709238","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"箱田 照幸","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"709239","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"八巻 徹也","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"709240","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Orientational control of CeO2 films on sapphire substrates grown by magnetron sputtering","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Orientational control of CeO2 films on sapphire substrates grown by magnetron sputtering"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2016-08-24"},"publish_date":"2016-08-24","publish_status":"0","recid":"72004","relation_version_is_last":true,"title":["Orientational control of CeO2 films on sapphire substrates grown by magnetron sputtering"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:44:54.174641+00:00"}