{"created":"2023-05-15T14:49:01.649130+00:00","id":67153,"links":{},"metadata":{"_buckets":{"deposit":"8410642e-680b-41e8-8d8d-bc0d4e92588a"},"_deposit":{"created_by":1,"id":"67153","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"67153"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00067153","sets":["10:29"]},"author_link":["660177","660176","660179","660181","660178","660180"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-09-19","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"GaNナノワイヤの発光特性は、これまでバンド端付近(365 nm)の発光に関しては成長条件との相関、イエロールミネッセンスと呼ばれる500~600 nm付近の発光に関しては、ナノワイヤの極性や形状との相関について調べられている。しかし、GaNナノワイヤとGaN薄膜及びGaN基板との発光特性の比較は行われていない。そこで本研究は、RF-MBE法を用いてGaNナノワイヤとGaN薄膜をそれぞれ作製し、PL法を用いて発光特性を比較した。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第79回応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"上杉, 智洋"}],"nameIdentifiers":[{"nameIdentifier":"660176","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"660177","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"660178","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"上杉 智洋","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"660179","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 拓生","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"660180","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"660181","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"MBE成長GaNナノワイヤにおけるイエロールミネッセンスの抑制","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"MBE成長GaNナノワイヤにおけるイエロールミネッセンスの抑制"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-02-15"},"publish_date":"2019-02-15","publish_status":"0","recid":"67153","relation_version_is_last":true,"title":["MBE成長GaNナノワイヤにおけるイエロールミネッセンスの抑制"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:40:59.160573+00:00"}