@misc{oai:repo.qst.go.jp:00067150,
 author = {李, 松田 and V., Larionov Konstantin and I., Popv Zakhar and Yamada, Yoichi and Amemiya, Kenta and 圓谷, 志郎 and Sakuraba, Yuya and Naramto, Hiroshi and B., Sorokin Pavel and 境, 誠司 and 李 松田 and 圓谷 志郎 and 境 誠司},
 month = {Mar},
 note = {As a zero-gap semiconductor with a pin-hole free nature, graphene was proposed as an attractive low energy barrier for vertical spin-valves (SV) to solve the trade-off between MR ratio and low RA product usually observed in MgO-based vertical SV. So far, the MR ratio reported in graphene-spacer vertical SV is far below the application level due to the usage of conventional ferromagnetic electrodes (Ni, Co, Fe etc.) with low spin polarization. Utilizing high spin-polarized ferromagnetic electrodes such as full Heusler alloys is potential way to enhance the MR ratio in graphene-spacer SV, however, there is no precedent for success in the growth of graphene on Heusler alloy underlayer. In this study, we report on the demonstration and characterization of a novel heterostructure consisting of single-layer graphene (SLG) synthesized by high-vacuum chemical vapor deposition (CVD) on a half-metallic Co2Fe(Ge0.5Ga0.5) (CFGG) Heusler alloy, which provides a promising building block for developing high performance graphene-spacer vertical SV., 日本応用物理学会講演会},
 title = {Electronic and magnetic properties of graphene/Co2Fe(Ge0.5Ga0.5) Heusler alloy heterostructure},
 year = {2019}
}