@misc{oai:repo.qst.go.jp:00067096,
 author = {田口, 富嗣 and 山本, 春也 and 大場, 弘則 and 田口 富嗣 and 山本 春也 and 大場 弘則},
 month = {Dec},
 note = {SiC offers exciting opportunities in electronic devices and in structural materials at high temperature. So far, we have succeeded in synthesizing SiC nanotubes by the reaction of multi-walled carbon nanotubes with Si powder in vacuum. In this study, the effect of ion irradiation on crystal lattice plane spacing change in SiC nanotube was investigated by using in-situ transmission electron microscopy (TEM) observation technique.
  The effect of ion fluence on the crystal lattice plane spacing in SiC nanotube by ion irradiation at room temperature and 700 ºC was evaluated. From this result, the lattice plane spacing of crystals in the nanotube increases in increasing ion fluence at room temperature, while that at 700 ºC decreases monotonically up to the irradiation damage of 24.1 dpa (9.2 × 10^20 ions/m^2). Some researchers have reported that the lattice expansion occurs after neutron irradiation at room temperature as well as above 700 ºC in bulk SiC. Many defects induced by ion irradiation may remain in SiC, and their amount increases with increasing irradiation damage at room temperature, eventually converting the crystals to amorphous SiC. This could explain the increasing lattice plane spacing in the SiC nanotube irradiated at room temperature. At irradiation damage higher than 1.1 × 10^20 ions/m^2, we could not evaluate the lattice plane spacing due to complete amorphization of SiC crystals. The lattice plane spacing slightly decreases from 0.254 to 0.252 nm, which is very consistent with the {111} lattice plane spacing of bulk 3C-SiC. These results support that the lattice plane spacing in the as-synthesized SiC nanotube may be slightly larger due to these inherent defects., 第28回日本MRS年次大会},
 title = {Ion Irradiation-Induced Novel Microstructural Change in SiC Nanotubes},
 year = {2018}
}