{"created":"2023-05-15T14:48:53.210367+00:00","id":66966,"links":{},"metadata":{"_buckets":{"deposit":"3f5923e9-c2bc-45f4-8f8b-9df368927e72"},"_deposit":{"created_by":1,"id":"66966","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"66966"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00066966","sets":["10:29"]},"author_link":["658212","658211","658214","658206","658208","658213","658205","658209","658204","658210","658207"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-09-21","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"炭化ケイ素半導体中の点欠陥は、量子暗号通信や量子センシングといった量子分野への応用が期待される単一光子源(SPS)への応用が期待されている。これまでに我々は、SiC表面に電流注入や光励起によって室温動作する酸化起因の高輝度SPS（表面SPS）が存在することを明らかにしたが、今回は、この表面SPSの更なる物性理解を目的として、デバイス中に形成されるSPSの発光スペクトルや励起強度依存性などを調べた。作製したp+nn+ダイオード中の表面SPSに対して共焦点レーザー走査型蛍光顕微鏡 (CFM) を用いて励起光強度を変化させながらフォトルミネッセンス (PL) 測定による発光中心の蛍光観察を行ったところ、レーザーパワーの上昇に伴い発光強度の増加するが、増加はレーザ強度に比例するのではなく飽和傾向が見られることが見いだされた。また、PLスペクトルは大きく2種類に分類できるが、これらは欠陥構造が異なっているものの、発光に関しては類似の性質を有することが示唆される結果を得た。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第79回応用物理学会秋季学術講演会発表参加の為","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"常見, 大貴"}],"nameIdentifiers":[{"nameIdentifier":"658204","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤, 真一郎"}],"nameIdentifiers":[{"nameIdentifier":"658205","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎, 雄一"}],"nameIdentifiers":[{"nameIdentifier":"658206","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"658207","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"土方, 泰斗"}],"nameIdentifiers":[{"nameIdentifier":"658208","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"658209","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"常見 大貴","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"658210","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤 真一郎","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"658211","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎 雄一","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"658212","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"658213","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"658214","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"SiC p+nn+ダイオード中の単一光子源の発光特性に関する考察","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"SiC p+nn+ダイオード中の単一光子源の発光特性に関する考察"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-11-09"},"publish_date":"2018-11-09","publish_status":"0","recid":"66966","relation_version_is_last":true,"title":["SiC p+nn+ダイオード中の単一光子源の発光特性に関する考察"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:42:58.206513+00:00"}