{"created":"2023-05-15T14:48:51.480390+00:00","id":66925,"links":{},"metadata":{"_buckets":{"deposit":"21b98059-d87a-4a12-b8dd-1685d7c5aeaa"},"_deposit":{"created_by":1,"id":"66925","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"66925"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00066925","sets":["10:29"]},"author_link":["657911","657913","657914","657916","657912","657915"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-09-18","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"分子線エピタキシャル（MBE）成長中のGaN表面は、常に液体Gaによって覆われていることが高品質結晶を得る条件として知られており、液体GaがGaN表面に対してランダムに吸着しているのか、それともある程度の秩序をもっているのか、きわめて興味深い。GaN表面の構造に関しては、これまでにも多くの実験的または第一原理計算をベースとした理論的な研究例があるが、GaN成長中の実際の表面構造を定量的に捉えた報告はない。私たちは、反射高速電子線回折（RHEED）強度とCrystal Truncation Rod（CTR）散乱強度を同時にその場測定することで、GaN表面上にある2ML程度のGa吸着層が表面垂直方向にも面内方向にも秩序をもっていることを突き止めた。本研究はGa吸着層の構造をより定量的に検討するため、その場測定で得られたCTR散乱強度に対して、構造モデルのシミュレーションをおこなった。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第79回応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"657911","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"岩田, 卓也"}],"nameIdentifiers":[{"nameIdentifier":"657912","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"657913","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 拓生","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"657914","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"岩田 卓也","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"657915","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"657916","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"GaN表面上Ga吸着層の構造解析","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"GaN表面上Ga吸着層の構造解析"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-09-22"},"publish_date":"2018-09-22","publish_status":"0","recid":"66925","relation_version_is_last":true,"title":["GaN表面上Ga吸着層の構造解析"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:43:25.359640+00:00"}