{"created":"2023-05-15T14:48:41.248013+00:00","id":66699,"links":{},"metadata":{"_buckets":{"deposit":"56b4a60e-70d7-44b1-98f1-74b12b1540e8"},"_deposit":{"created_by":1,"id":"66699","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"66699"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00066699","sets":["10:29"]},"author_link":["655877","655875","655878","655873","655870","655865","655867","655866","655874","655869","655868","655876","655871","655872"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-09-06","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"ワイドギャップ半導体結晶中の点欠陥を利用し、単一で固有の光子を規則的に生成する単一光子源(SPS)の生成や、スピンを利用した量子センシングへの応用が注目されている。これまでに我々は炭化ケイ素(SiC) pnダイオードの電極近傍にSPSが形成されることを確認しているが詳細は明らかになっていない。本研究ではプレーナー方SiC p+nn+ダイオードを作製し、デバイスへのバイアス電圧印加がSPSの発光特性に及ぼす影響について調べた。バイアス印加の有無に関わらず複数の発光点が観測されたが、ある発光点のみ逆方向バイアス印加によって発光強度が著しく増加した。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第78回応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"本多, 智也"}],"nameIdentifiers":[{"nameIdentifier":"655865","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"常見, 大貴"}],"nameIdentifiers":[{"nameIdentifier":"655866","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"児島, 一聡"}],"nameIdentifiers":[{"nameIdentifier":"655867","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤, 真一郎"}],"nameIdentifiers":[{"nameIdentifier":"655868","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"655869","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"小野田, 忍"}],"nameIdentifiers":[{"nameIdentifier":"655870","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"土方, 泰斗"}],"nameIdentifiers":[{"nameIdentifier":"655871","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"655872","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"本多 智也","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"655873","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"常見 大貴","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"655874","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤 真一郎","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"655875","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"655876","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"小野田 忍","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"655877","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"655878","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"SiC p+nn+ダイオード中の発光中心のバイアス電圧による発光強度変化 ","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"SiC p+nn+ダイオード中の発光中心のバイアス電圧による発光強度変化 "}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-03-26"},"publish_date":"2018-03-26","publish_status":"0","recid":"66699","relation_version_is_last":true,"title":["SiC p+nn+ダイオード中の発光中心のバイアス電圧による発光強度変化 "],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:45:59.441008+00:00"}