{"created":"2023-05-15T14:48:40.449435+00:00","id":66681,"links":{},"metadata":{"_buckets":{"deposit":"1656419a-1089-4022-baec-9866658a3e80"},"_deposit":{"created_by":1,"id":"66681","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"66681"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00066681","sets":["10:29"]},"author_link":["655732","655734","655731","655730","655729","655733"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-03-18","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"半導体薄膜成長の起点となる表面の原子配置は、結晶品質の良し悪しに影響するため、素子応用の観点からも重要である。特に、窒化ガリウム（GaN）の分子線エピタキシャル（MBE）成長では、反射高速電子線回折（RHEED）や表面脱離元素量の結果から、GaN表面に2原子層ほど液体状に存在する、いわゆるバイレイヤーの存在が重要であることが定説となっている。ただし、従来の測定手法では、バイレイヤーのような薄い層の構造を調べるには限界があり、Ga原子がランダムに存在しているのか、それとも液体にもかかわらず秩序構造を有しているかは明らかになっていない。そこで本研究は、従来のRHEED強度測定に加えて、表面構造の違いに顕著なCrystal Truncation Rod（CTR）散乱強度を同時に測定し、Ga吸着層の秩序構造を検討した。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第65回応用物理学会春季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"655729","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"岩田, 卓也"}],"nameIdentifiers":[{"nameIdentifier":"655730","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"655731","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 拓生","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"655732","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"岩田 卓也","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"655733","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"655734","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"GaN表面上Ga吸着層の秩序構造","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"GaN表面上Ga吸着層の秩序構造"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-03-22"},"publish_date":"2018-03-22","publish_status":"0","recid":"66681","relation_version_is_last":true,"title":["GaN表面上Ga吸着層の秩序構造"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:46:12.556026+00:00"}