{"created":"2023-05-15T14:48:39.462263+00:00","id":66659,"links":{},"metadata":{"_buckets":{"deposit":"0a806fec-4cfe-4702-904a-b363418ff25e"},"_deposit":{"created_by":1,"id":"66659","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"66659"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00066659","sets":["10:29"]},"author_link":["655566","655561","655563","655564","655560","655557","655565","655562","655558","655559"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-09-05","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The high-voltage and high-temperature capabilities of Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) are expected to find applications in extreme radiation environments. This paper reports the first investigation into the effects of ionizing radiation on Ga2O3 MOSFETs. The devices remained fully functional after exposure to a cumulative gamma-ray (γ-ray) dose of 1 MGy(SiO2). High γ-ray tolerance\nwas demonstrated for the bulk Ga2O3 channel by virtue of the MOSFETs’ stable DC output characteristics against irradiation. Radiation-induced degradations in the gate insulation and surface passivation were found to limit the overall radiation resistance of these devices.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第78回応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hoi, Wong Man"}],"nameIdentifiers":[{"nameIdentifier":"655557","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"655558","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"655559","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"655560","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Kohei"}],"nameIdentifiers":[{"nameIdentifier":"655561","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuramata, Akito"}],"nameIdentifiers":[{"nameIdentifier":"655562","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamakoshi, Shigenobu"}],"nameIdentifiers":[{"nameIdentifier":"655563","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山 昭憲","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"655564","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"655565","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"655566","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Gamma-Ray Irradiation Effects on Ga2O3 MOSFETs","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Gamma-Ray Irradiation Effects on Ga2O3 MOSFETs"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-03-16"},"publish_date":"2018-03-16","publish_status":"0","recid":"66659","relation_version_is_last":true,"title":["Gamma-Ray Irradiation Effects on Ga2O3 MOSFETs"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:46:26.780278+00:00"}