@misc{oai:repo.qst.go.jp:00066659,
 author = {Hoi, Wong Man and 武山, 昭憲 and 牧野, 高紘 and 大島, 武 and Sasaki, Kohei and Kuramata, Akito and Yamakoshi, Shigenobu and 武山 昭憲 and 牧野 高紘 and 大島 武},
 month = {Sep},
 note = {The high-voltage and high-temperature capabilities of Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) are expected to find applications in extreme radiation environments. This paper reports the first investigation into the effects of ionizing radiation on Ga2O3 MOSFETs. The devices remained fully functional after exposure to a cumulative gamma-ray (γ-ray) dose of 1 MGy(SiO2). High γ-ray tolerance
was demonstrated for the bulk Ga2O3 channel by virtue of the MOSFETs’ stable DC output characteristics against irradiation. Radiation-induced degradations in the gate insulation and surface passivation were found to limit the overall radiation resistance of these devices., 第78回応用物理学会秋季学術講演会},
 title = {Gamma-Ray Irradiation Effects on Ga2O3 MOSFETs},
 year = {2017}
}