{"created":"2023-05-15T14:48:37.238529+00:00","id":66609,"links":{},"metadata":{"_buckets":{"deposit":"6c4322ac-c9d7-4464-9a92-1e4aa1b7821b"},"_deposit":{"created_by":1,"id":"66609","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"66609"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00066609","sets":["10:29"]},"author_link":["655106","655107"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-01-30","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We calculate the electron excitation in cubic silicon carbide (3C-SiC) caused by the intense femtosecond laser double pulses \nusing time-dependent density functional theory (TDDFT).\nAfter the first pulse ends, excited electrons should be relaxed by the collisional processes.\nBecause TDDFT dose not include the scattering processes, the thermalization is mimicked by following three assumptions. \nFirst, we assume no collisions and relaxation processes.\nSecond, we assume the partially thermalized electronic state defined by two quasi-temperatures in the conduction and valence bands individually. \nThird, we assume the thermalized electron distribution, which is expressed by single electron temperature.\nOur results indicate that the plasma frequency formed by the first pulse is the key parameter in energy absorption in the second pulse.\nWhen the plasma frequency is comparable to the frequency of the laser, the energy absorption in the second pulse shows maximum. \nThe lower electron temperature shows higher plasma frequency\n and higher efficient energy absorption, because the effective mass of electron becomes smaller. ","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"SPIE Photonic West  LASE","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"乙部, 智仁"}],"nameIdentifiers":[{"nameIdentifier":"655106","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"乙部 智仁","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"655107","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Effect of plasma formation on the double pulse laser excitation of cubic silicon carbide","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effect of plasma formation on the double pulse laser excitation of cubic silicon carbide"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-02-05"},"publish_date":"2018-02-05","publish_status":"0","recid":"66609","relation_version_is_last":true,"title":["Effect of plasma formation on the double pulse laser excitation of cubic silicon carbide"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:47:01.706547+00:00"}