{"created":"2023-05-15T14:48:36.217349+00:00","id":66586,"links":{},"metadata":{"_buckets":{"deposit":"6ccb3159-fb39-4c15-a37c-63b625ccc8d4"},"_deposit":{"created_by":1,"id":"66586","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"66586"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00066586","sets":["10:29"]},"author_link":["770814","770813"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-12-16","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"金触媒GaAsナノワイヤの構造多形について、放射光その場X線回折をおこない、積層欠陥密度など結晶構造の分布に関する情報を含めて決定した。測定結果は、GaAsナノワイヤの成長を核形成理論に基づくシミュレーションに基づいて考察した。その結果、ZB上のWZ成長核、WZ上のZB成長核が形成するさいに、高いエネルギー障壁があることが明らかになった。また、成長初期に見られるZB成長からWZ成長への変化は、核形成サイトの違いが要因であることがわかった。\n","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"特別研究プロジェクト「結晶成長の数理」第12回研究会発表","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"770813","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahashi, Masamitsu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"770814","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"III-V族半導体ナノワイヤの構造多形形成機構","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"III-V族半導体ナノワイヤの構造多形形成機構"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-01-12"},"publish_date":"2018-01-12","publish_status":"0","recid":"66586","relation_version_is_last":true,"title":["III-V族半導体ナノワイヤの構造多形形成機構"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T00:28:32.552288+00:00"}