{"created":"2023-05-15T14:48:30.424351+00:00","id":66457,"links":{},"metadata":{"_buckets":{"deposit":"62c85715-86b6-46a8-817f-d5dbf85d3fb6"},"_deposit":{"created_by":1,"id":"66457","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"66457"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00066457","sets":["10:29"]},"author_link":["770915","770913","770918","770911","770914","770917","770912","770916","770919"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-09-07","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"高品質GaInN 膜の実現は、GaN マトリックスを用いるこれまでのGaN 系発光デバイスに対し、より幅広いデバイス設計・デバイス応用を可能とする。高品質GaInN膜を実現するためには、格子緩和過程を理解し、その過程を制御することが求められる。今回は、RF-MBE 法を用いてGaN 上およびInN上にGaInN 成長を行い、その場X 線逆格子マッピング法を用いてGaInN 成長初期過程の観察を行ったので報告する。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第78回応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"山口, 智広"}],"nameIdentifiers":[{"nameIdentifier":"770911","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"770912","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"770913","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"尾沼, 猛儀"}],"nameIdentifiers":[{"nameIdentifier":"770914","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"本田, 徹"}],"nameIdentifiers":[{"nameIdentifier":"770915","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"荒木, 努"}],"nameIdentifiers":[{"nameIdentifier":"770916","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"名西, 憓之"}],"nameIdentifiers":[{"nameIdentifier":"770917","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Takuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"770918","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahashi, Masamitsu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"770919","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"GaN 上およびInN 上GaInN 成長における成長初期過程の観察","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"GaN 上およびInN 上GaInN 成長における成長初期過程の観察"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-09-28"},"publish_date":"2017-09-28","publish_status":"0","recid":"66457","relation_version_is_last":true,"title":["GaN 上およびInN 上GaInN 成長における成長初期過程の観察"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T00:27:58.907344+00:00"}