@misc{oai:repo.qst.go.jp:00066426,
 author = {Ohshima, Takeshi and Honda, Tomoya and Tsunemi, Hiroki and Makino, Takahiro and Sato, Shinichiro and Onoda, Shinobu and Hijikata, Y. and C., Johnson B. and R., Klein J. and Lohrmann, A. and C., McCaiium J. and 大島 武 and 本多 智也 and 常見 大貴 and 牧野 高紘 and 佐藤 真一郎 and 小野田 忍},
 month = {Aug},
 note = {In-plain pi(n-)n diodes were fabricated on n-type epitaxial 4H-SiC layer grown on a n-type 4H-SiC substrate. As a result of confocal photoluminescence measurements, two types of single photon sources were observed in n-type region of 4H-SiC pin diodes, International Union of Materials Research Societies, The 15th International Conference on Advanced Materials (IUMRS-ICAM2017)},
 title = {Observation of Single Photon Sources in Silicon Carbide PiN Diodes},
 year = {2017}
}