{"created":"2023-05-15T14:48:28.183098+00:00","id":66407,"links":{},"metadata":{"_buckets":{"deposit":"daec7d75-268a-4ccb-8371-d6e65608b515"},"_deposit":{"created_by":1,"id":"66407","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"66407"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00066407","sets":["10:29"]},"author_link":["653408","653411","653409","653410"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-09-07","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"　エピタキシャル膜の成長フロントとなる表面の原子配置は、結晶品質の良し悪しに影響するため、素子応用の観点からも重要であり、これまでにも詳細な理解が望まれてきた。特に、窒化ガリウム（GaN）の分子線エピタキシャル（MBE）成長では、反射高速電子線回折（RHEED）や表面脱離元素量の結果から、GaN表面に2原子層ほど液体状に存在する、いわゆるGa原子層（Ga-bilayer）の存在が重要であることが定説となっている。ただし、従来の測定手法では、このGa-bilayerのような非常に薄い層を調べるには限界があった。特に表面面内方向におけるGa-bilayerの原子配置に関しては、Ga原子がランダムに存在しているのか、それとも液体にも関わらず周期的な構造をしているかは明らかになっていない。\n　本研究は、三次元結晶からのブラッグ反射に比べて散乱強度は著しく小さいものの、表面構造の違いに顕著なCrystal Truncation Rod（CTR）散乱測定を、GaN表面に適用し、Ga-bilayer/GaN表面構造を検討した結果を報告する。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第78回応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"653408","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"653409","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 拓生","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"653410","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"653411","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Ga-bilayer/GaN表面の X線CTR散乱測定","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ga-bilayer/GaN表面の X線CTR散乱測定"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-09-11"},"publish_date":"2017-09-11","publish_status":"0","recid":"66407","relation_version_is_last":true,"title":["Ga-bilayer/GaN表面の X線CTR散乱測定"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:49:18.651067+00:00"}